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Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
100
V GS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
200
100
150 C
-55 C
10
10
o
o
25 C
o
2. T C = 25 C
1
0.3
0.1
1
*Notes:
1. 250 μ s Pulse Test
o
10
20
1
4
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
5 6 7 8
9
V DS , Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.24
V GS , Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
0.20
100
0.16
150 C
25 C
0.12
0.08
V GS = 10V
V GS = 20V
10
o
o
*Notes:
*Note: T C = 25 C
0.04
0
25
50 75
100 125
o
1
0.2
1. V GS = 0V
2. 250 μ s Pulse Test
0.4 0.8 1.2
1.6
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
50000
10
V DS = 100V
V DS = 250V
10000
C iss
8
V DS = 400V
6
1000
*Note:
C oss
4
100
1. V GS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd ( Cds = shorted )
2
Coss = Cds + Cgd
Crss = Cgd
10
0.1 1 10 100
V DS , Drain-Source Voltage [V]
C rss
600
0
0
*Note: I D = 35A
40 80 120
Q g , Total Gate Charge [nC]
160
?2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C1
3
www.fairchildsemi.com
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